Methods of forming field effect transistors and capacitor-free dynamic random access memory cells

A method of forming a capacitor-free dynamic random access memory cell, comprising:

• implanting hydrogen and/or inert atoms from Group 0 of the periodic table into a front side of a first semiconductor wafer to define a buried implant layer therein;
• forming a first electrically insulating layer pattern on the front side of the semiconductor wafer;
• selectively etching the front side of the semiconductor wafer to define a channel region protrusion having a first width extending therefrom, using the first electrically insulating pattern as an etching mask;
• depositing a second electrically insulating layer on sidewalls of the channel region protrusion;
• planarizing the second electrically insulating layer to thereby define an electrical isolation region surrounding the channel region protrusion;
• bonding a second semiconductor wafer on a planarized surface of the electrical isolation region;
• delaminating a portion of a backside of the first semiconductor wafer to define a semiconductor layer having a primary surface extending opposite the channel region protrusion and the electrical isolation region, said first semiconductor wafer defined to have a second width greater than the first width;
• forming a gate electrode extending opposite the channel region protrusion, on the primary surface;
• and
• forming source and drain regions of first conductivity type in the semiconductor layer, on opposite sides of the gate electrode, said source and drain regions defining a channel region therebetween that forms a non-rectifying junction with the channel region protrusion, which has a greater volume than the channel region and operates as a charge storage region within the capacitor-free dynamic random access memory cell.