Methods of fabricating dual layer semiconductor devices

A method for fabricating a semiconductor-based device, the method comprising:

• providing a distal material to support hole conduction for at least one p-channel component;
• providing a proximal material in contact with the distal material and having a thickness less than approximately 4 nm that facilitates hole conduction by the distal material;
• and
• forming the at least one p-channel component having a channel comprising a portion of the distal material and a portion of the proximal material,
• wherein the channel of the at least one p-channel component is in contact with a dielectric layer, the distal material comprises compressively strained Si1-yGey, and the strain in the distal material is induced by relaxed material in contact with the distal material.

A method for fabricating a semiconductor-based device, the method comprising:

• providing an n-channel component comprising a first strained silicon channel;
• and
• providing a p-channel component comprising a second strained silicon channel proximate a dielectric layer;
• wherein the second strained silicon channel is disposed proximate compressively strained Si1-yGey, the n-channel component has a first drive current enhancement relative to an unstrained reference n-channel component, the p-channel component has a second drive current enhancement relative to an unstrained reference p-channel component, and the second drive current enhancement is larger than the first drive current enhancement.