Polyconductor line end formation and related mask
AssigneeInternational Business Machines Corporation
InventorsShahid A. Butt, Allen H. Gabor, Donald J. Samuels
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Abstract
Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.
Claims1
A method of forming adjacent polyconductor line ends, the method comprising:
- forming a polyconductor layer over an isolation region;
- forming a mask over the polyconductor layer, the mask including a shape to create the polyconductor line ends and a sub-resolution correction element to ensure a designed proximity of the polyconductor line ends;
- and
- etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the sub-resolution correction element is removed during the etching,
- wherein the sub-resolution correction element exists despite any optical proximity correction (OPC), and
- wherein the sub-resolution correction element includes an island positioned in an opening between each shape of the mask for the polyconductor line ends.
Dependencies are inferred from the claim text.