Quantum device, manufacturing method of the same and controlling method of the same

A manufacturing method of a quantum device, comprising the steps of:

• introducing impurity atoms into a surface of a semiconductor substrate;
• bringing a tip of an atomic force microscope to which a negative bias is applied into contact with the surface of the semiconductor substrate to form a ring-shaped oxide film and a plurality of dot-shaped oxide films on the surface of the semiconductor substrate in an atmosphere containing water;
• oxidizing portions around the ring-shaped oxide film and the dot-shaped oxide films;
• forming a ring-shaped groove and dot-shaped pits in the surface of the semiconductor substrate by removing the ring-shaped oxide film and the dot-shaped oxide films and removing the oxidized portions therearound;
• and
• growing semiconductor films in the groove and the pits.

A manufacturing method of a quantum device, comprising the steps of:

• bringing a tip of an atomic force microscope to which a negative bias is applied into contact with a surface of a semiconductor substrate to form a ring-shaped oxide film and a dot-shaped oxide film adjacent to each other on the surface of the semiconductor substrate in an atmosphere containing water;
• depositing a single impurity atom on a center of the ring-shaped oxide film;
• forming a ring-shaped groove and a dot-shaped pit in the surface of the semiconductor substrate by removing the ring-shaped oxide film and the dot-shaped oxide film;
• and
• forming a quantum ring and a quantum dot by growing semiconductor films in the groove and the dot.

A manufacturing method of a quantum device, comprising the steps of:

• introducing impurity atoms into a surface of a semiconductor substrate;
• bringing a tip of an atomic force microscope to which a negative bias is applied into contact with the surface of the semiconductor substrate to form a ring-shaped oxide film and a dot-shaped oxide film adjacent to each other on the surface of the semiconductor substrate in an atmosphere containing water;
• oxidizing portions around the ring-shaped oxide film and the dot-shaped oxide film;
• forming a ring-shaped groove and a dot-shaped pit in the surface of the semiconductor substrate by removing the ring-shaped oxide film and the dot-shaped oxide film and removing the oxidized portions therearound;
• and
• forming a quantum ring and a quantum dot by growing semiconductor films in the groove and the pit.