Method of making vertical structure semiconductor devices including forming hard and soft copper layers

A method of fabricating a light emitting semiconductor device, comprising the steps of:

• forming a diode structure over a substrate;
• forming a plurality of metal layers over a first side of said diode structure;
• forming an Indium Tin Oxide (ITO) layer including a copper layer plated using cyanide or acid-base bath and a sulfate-base copper alloy layer over said diode structure;
• removing said substrate from said diode structure;
• forming one or more contacts over a second side of said diode structure where said substrate was removed, said second side being opposite said first side;
• and
• separating said diode structure into a plurality of individual diodes wherein said removing includes applying a laser beam to an interface between said diode structure and said substrate, inserting diffusing media between a laser source that produces said laser beam and said substrate, and liquefying at least a portion of a first buffer layer formed over said substrate.

A method of fabricating semiconducter devices, comprising:

• forming a GaN-containing layer over a substrate;
• forming a p-type ITO layer, said p-type ITO layer being disposed toward a first side of said GaN-containing layer;
• forming a metal support layer, said metal support layer being disposed toward said first side of said GaN-containing layer, said metal support layer being deposited using electroplating including a copper layer plated using cyanide or acid-base bath and a sulfate-base copper alloy layer, wherein said p-type ITO layer is disposed between said GaN-containing layer and said metal support layer;
• removing said substrate front said GaN-containing layer;
• forming one or more electrical contacts, after said substrate was removed, toward a second side of said GaN-containing layer, wherein said second side is opposite said first side.