Inorganic resist material and nano-fabrication method by utilizing the same

Abstract

An inorganic resist material is provided, which is an incomplete oxide of a phase-change material. The oxygen content in the inorganic resist material is lower than the stoichiometric oxygen content of a complete oxide of the phase-change material, and a general formula of the inorganic resist material is A1-xOx, in which A represents the phase-change material, and x is between 5 at. % and 65 at. %. The inorganic resist material can be used to form line patterns or recording pits with size smaller than the exposure light spot by using the laser of conventional lithography process as an exposure source.

Dependencies are inferred from the claim text.