Resist material, resist pattern and forming method for the same, and a semiconductor device and manufacturing method for the same

A resist material comprising:

• a) a first photo-acid generator exhibiting an absorption peak to exposure light having a wavelength of less than 300 nm, wherein the first photo-acid generator is an onium salt compound expressed by (R1)+X−, where X− is an anion, and (R1)+ is selected from the group consisting of the compounds expressed by formulae below:
• wherein R2 represents a substituent group;
• b) a second photo-acid generator exhibiting an absorption peak to exposure light having a wavelength of 300 nm or more, wherein the second photo-acid generator is selected from the group consisting of the compounds expressed by formulae below,
• ;
• and
• c) a resin of a polarity changeable type, wherein 5-80% of all polar groups in the resin are substituted by a protective group, wherein the protective group is eliminated by an acid resulting from the first and second photo-acid generators, and wherein the protective group is a hydrophobic protective group which is an adamantyl or norbornane functional group expressed by the formula below,
• where “R1” represents a straight chain, branched or cyclic alkyl group having 1 to 4 carbon atoms, which may be substituted or non-substituted, and “Z” represents a plurality of atoms which forms one of a substituted or non-substituted adamantyl group and a substituted or non-substituted norbornane functional group,
• wherein the resist material is a positive resist material.