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US 7,465,354 B2Granted
Patterned ferroelectric thin films for microwave devices
AssigneeNational University of Singapore
InventorsChong Kim Ong, Chin Yaw Tan
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Abstract
A process, for patterning a thin film that is highly resistant to conventional etching processes and that is to be deposited at a high substrate temperature, is disclosed. The process uses a liftoff method wherein a refractory material has been substituted for the conventional organic resin. The method is particularly useful for the fabrication of tunable microwave devices and ferroelectric memory elements.
Claims6
A process to manufacture a tunable microwave device, comprising:
- providing a substrate and depositing thereon a masking layer of material, selected from the group consisting of yttrium barium cuprate, copper oxide, and calcium oxide, to a first thickness;
- patterning said masking layer to form a negative mask for a ferroelectric thin film;
- at a temperature of at least 650° C., growing said ferroelectric thin film on said mask and substrate, to a second thickness that is less than the first thickness;
- then removing said masking material whereby said ferroelectric thin film remains only where it is in direct contact with said substrate, and
- then depositing and patterning a conductive layer.
2 more elements
Dependencies are inferred from the claim text.