Multi-menisci processing apparatus

A manifold for use in preparing a wafer surface, comprising:

• a head having a surface that is configured to be placed proximate to the wafer surface, the head having a first process window region and a second process window region, each of the first process window region and the second process window region including a plurality of fluid input conduits and a plurality of fluid output conduits, such that the plurality of fluid input conduits are configured to deliver a fluid to the wafer surface and the plurality of fluid output conduits substantially remove the fluid during operation, and such that during operation a first fluid meniscus is defined between the head surface and wafer surface at the first process window region and a second fluid meniscus is defined between the head surface and the wafer surface at the second process window region;
• wherein the first process window region and the second process window region are arranged parallel to each other, such that the fluid meniscus of the first process window region and the second process window extend at least a diameter of the wafer surface.

A substrate preparation apparatus, the apparatus comprising:

• a housing configured to be installed in a substrate fabrication facility, the housing including a manifold for use in preparing a wafer surface, the manifold configured to include a first process window in a first portion of the manifold, a first fluid meniscus capable of being defined within the first process window, and a second process window in a second portion of the manifold, a second fluid meniscus capable of being defined within the second process window, within the first portion and the second portion of the manifold extend up to at least a width of the wafer surface, and the portion and second portion and are arranged in a parrallel orientation on a same side of the wafer surface;
• and
• an arm being integrated to the housing, the arm being coupled to the manifold, such that the arm maintains positioning the manifold in proximity with the substrate during operation.