Method of producing III-nitride substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorNaoki Matsumoto
Life of this patent
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Abstract
An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22. On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22. During cutting the ingot 3, the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.
Claims3
A method of producing a III-nitride substrate by cutting an ingot of a hexagonal III-nitride crystal, using a wire array, comprising:
- a step of cutting the ingot with supply of an abrasive fluid, while feeding at least one of the ingot and the wire array in a direction intersecting with an extending direction of a wire in the wire array,
- wherein during cutting the ingot, the extending direction of the wire in the wire array is inclined at 3° or more to the {1-100} plane of the ingot and is set parallel to the {0001} plane of the ingot, and a down cut method to feed the ingot from top to the wire array is used.
A method of producing a III-nitride substrate by cutting an ingot of a hexagonal III-nitride crystal, using a wire array, comprising:
- a step of cutting the ingot with supply of an abrasive fluid, while feeding at least one of the ingot and the wire array in a direction intersecting with an extending direction of a wire in the wire array,
- wherein during cutting the ingot, the extending direction of the wire in the wire array is inclined at 3° or more to the {1-100} plane of the ingot and is set parallel to the {0001} plane of the ingot, and either one of the ingot and guide rollers is swung.
A method of producing a III-nitride substrate by cutting an ingot of a hexagonal III-nitride crystal, using a wire array, comprising:
- a step of cutting the ingot with supply of an abrasive fluid, while feeding at least one of the ingot and the wire array in a direction intersecting with an extending direction of a wire in the wire array,
- wherein during cutting the ingot, the extending direction of the wire in the wire array is inclined at 3° or more to the {1-100} plane of the ingot and is set parallel to the {0001} plane of the ingot, and tension of the wire is set from 12N to 30N.
Dependencies are inferred from the claim text.