Method for repairing photoresist layer defects using index matching overcoat
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsDennis Richard McKean, Gary John Suzuki
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Abstract
A method is presented for repairing damaged photomasks for electronic component fabrication processes, particularly for fabrication of the ABS of a disk drive slider. The method includes applying an overcoat of material having index of fraction which is close to the index of refraction of the photoresist material of the damaged photomask to produce a non-scattering boundary surface. The overcoat material preferably includes an overcoat base material which is a polymer having an index of refraction which is in the range of plus or minus 0.1 from the index of refraction of said photoresist material.
Claims12
A method of fabrication for minimizing refractive notching defects in fabricated components, comprising:
- A) providing an unshaped block of component material;
- B) applying a photoresist material layer on said unshaped block;
- C) baking said photoresist material layer;
- D) applying an index matching overcoat to said baked photoresist material layer;
- E) applying a pattern mask to said baked photoresist material layer with said index matching overcoat to form protected areas and exposed areas of said baked photoresist material layer;
- F) exposing said baked photoresist material layer with said an index matching overcoat to light;
- G) developing said baked photoresist material layer and removing said index matching overcoat and the exposed backed photoresist material layer to produce developed photoresist mask areas which form protected areas of said unshaped block of component material;
- and
- H) milling said unshaped block of component material except the protected areas with a milling source to form a shaped component.
A method of fabrication for producing sliders for disk drives free from refractive notching defects comprising:
- A) providing an unshaped block of slider material;
- B) applying a photoresist material layer upon said unshaped block;
- C) baking said photoresist material layer;
- D) applying an index matching overcoat to said baked photoresist material layer;
- E) applying a pattern mask to said baked photoresist material layer with said index matching overcoat to form protected areas and exposed areas of said baked photoresist material layer;
- F) exposing said baked photoresist material layer with said an index matching overcoat to light;
- G) developing said baked photoresist material layer and removing said index matching overcoat and the exposed baked photresist material layer to produce developed photoresist mask areas which form protected areas of said unshaped block of slider material;
- and
- H) milling said unshaped block of slider material except the protected areas to form a shaped component.
Dependencies are inferred from the claim text.