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US 7,459,787 B2Granted
Multi-layered copper line structure of semiconductor device and method for forming the same
AssigneeDongbu Electronics Co., Ltd.
InventorLee Tae Young
Life of this patent
Estimating the term…
Abstract
A multi-layered copper line structure of a semiconductor device with a lower copper line, an upper copper line, and a via contact, which electrically connects the lower copper line and the upper copper line, can incorporate one or more dummy via contacts to reduce the occurrence of voids in the via contacts. The one or more dummy via contacts can be formed adjacent the via contact and non-electrically connected to the lower copper line.
Claims18
A multi-layered copper line structure of a semiconductor device, comprising:
- a lower copper line formed above a lower structure of a semiconductor device;
- an upper copper line formed above the lower copper line;
- a via contact formed between the lower copper line and the upper copper line to electrically connect the lower copper line and the upper copper line;
- and
- a dummy via contact formed adjacent the via contact, wherein the dummy via contact is connected to the upper copper line but is not connected to the lower copper line,
- wherein the via contact is provided in plurality and the dummy via contact is provided in plurality between the via contacts, wherein the dummy via contacts are formed in a line parallel to a line of the upper copper line.
3 more elements
A method for forming a multi-layered copper line of a semiconductor device, comprising:
- forming a first interlayer insulating layer above a lower structure;
- forming a lower copper line within the first interlayer insulating layer;
- forming a second interlayer insulating layer above the first interlayer insulating layer and the lower copper line;
- forming at least one via contact and at least one dummy via contact within the second interlayer insulating layer;
- forming a third interlayer insulating layer above the second interlayer insulating layer;
- and
- forming an upper copper line within the third interlayer insulating layer,
- wherein forming the at least one via contact and at least one dummy via contact within the second interlayer insulating layer, comprises:
- forming a plurality of via contacts and a plurality of dummy contacts, wherein dummy via contacts are formed between via contacts in a line of the upper copper line.
6 more elements
Dependencies are inferred from the claim text.