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US 7,459,736 B2Granted
Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-min Shin, Suk-pil Kim, Young-soo Park, Jung-hyun Lee, June-mo Koo
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Abstract
A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.
Claims23
A ferroelectric capacitor, comprising:
- a first electrode comprising an alloy of Ir and Ru, wherein the alloy is a multi-phase alloy with a first phase containing Ir and Ru and a second phase containing Ir and Ru;
- a ferroelectric layer disposed on the first electrode;
- and
- a second electrode disposed on the ferroelectric layer,
- wherein the alloy has a mixture of grains of an alpha (α) phase of an Ir-rich solid solution and a beta (β) phase of a Ru-rich solid solution.
2 more elements
A ferroelectric capacitor, comprising:
- a first electrode comprising an alloy of Ir and Ru wherein the alloy has an average composition of RuxIr1−x, x being in the range of 35 to 45 atomic percent;
- a ferroelectric layer disposed on the first electrode;
- and
- a second electrode disposed on the ferroelectric layer,
- wherein the alloy is a multi-phase alloy, a first phase and a second phase of the multi-phase alloy each containing Ir and Ru,
- wherein the alloy has a mixture of grains of an alpha (α) phase of an Ir-rich solid solution and a beta (β) phase of a Ru-rich solid solution.
3 more elements
A ferroelectric capacitor, comprising:
- a first electrode comprising an alloy of Ir and Ru wherein the alloy has an average composition of RuxIr1−x, x being in the range of 35 to 45 atomic percent;
- a ferroelectric layer disposed on the first electrode;
- and
- a second electrode disposed on the ferroelectric layer,
- wherein a root mean square (RMS) of a surface roughness of a surface of the ferroelectric layer is less than about 5.9 nm.
2 more elements
A ferroelectric memory, comprising:
- a substrate;
- and
- a plurality of memory cells arranged on the substrate, each memory cell comprising:
- a first electrode comprising an alloy of Ir and Ru, wherein the alloy is a multi-phase alloy with a first phase and a second phase of the multi-phase alloy each containing Ir and Ru,
- a ferroelectric layer disposed on the first electrode, and
- a second electrode disposed on the ferroelectric layer,
- wherein a root mean square (RMS) of a surface roughness of a surface of the ferroelectric layer is less than about 5.9 nm.
4 more elements
A ferroelectric memory, comprising:
- a substrate;
- and
- a plurality of memory cells arranged on the substrate, each memory cell comprising
- a first electrode comprising an alloy of Ir and Ru,
- a ferroelectric layer disposed on the first electrode, and
- a second electrode disposed on the ferroelectric layer,
- wherein the alloy is a multi-phase alloy, a first phase and a second phase of the multi-phase alloy each containing Ir and Ru,
- wherein the alloy has a mixture of grains of an alpha (α) phase of an Ir-rich solid solution and a beta (β) phase of a Ru-rich solid solution.
5 more elements
A ferroelectric memory, comprising:
- a substrate;
- and
- a plurality of memory cells arranged on the substrate, each memory cell comprising
- a first electrode comprising an alloy of Ir and Ru,
- a ferroelectric layer disposed on the first electrode, and
- a second electrode disposed on the ferroelectric layer,
- further comprising a surface oxide layer with a thickness of less than about 10 nm on the first electrode,
- wherein the alloy has a mixture of grains of an alpha (α) phase of an Ir-rich solid solution and a beta (β) phase of a Ru-rich solid solution.
5 more elements
A ferroelectric memory, comprising:
- a multiphase Ru40Ir60 alloy first electrode, wherein the first electrode further comprises oxygen within the alloy;
- a ferroelectric layer disposed on the first electrode;
- and
- a second electrode disposed on the ferroelectric layer,
- wherein the alloy has a mixture of grains of an alpha (α) phase of an Ir-rich solid solution and a beta (β) phase of a Ru-rich solid solution.
2 more elements
A ferroelectric capacitor, comprising:
- a first electrode comprising an alloy of Ir and Ru wherein the alloy has an average composition of RuxIr1−x, x being in the range of 35 to 45 atomic percent;
- a ferroelectric layer disposed on the first electrode;
- and
- a second electrode disposed on the ferroelectric layer,
- further comprising a surface oxide layer with a thickness of less than about 10 nm on the first electrode,
- wherein the alloy has a mixture of grains of an alpha (α) phase of an Ir-rich solid solution and a beta (β) phase of a Ru-rich solid solution.
3 more elements
Dependencies are inferred from the claim text.