Method for thin film deposition using multi-tray film precursor evaporation system

A method of depositing a Ru metal layer on a patterned substrate, comprising:

• providing a patterned substrate in a process chamber of a deposition system, wherein the patterned substrate contains one or more vias or trenches, or combinations thereof;
• forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas by:
• providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray in the plurality of spaced trays is configured to support the solid Ru3(CO)12 precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid Ru3(CO)12 precursor;
• heating the solid Ru3(CO)12 precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid Ru3(CO)12 precursor at the temperature to form the Ru3(CO)12 precursor vapor;
• and
• flowing the carrier gas in contact with the plurality of surfaces of the solid Ru3(CO)12 precursor in the precursor evaporation system during the heating to capture Ru3(CO)12 precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces;
• transporting the process gas from the precursor evaporation system to the process chamber;
• and
• exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal chemical vapor deposition process.