US 7,459,357 B2 · Versatile system for cross-lateral junction field effect transistor

Abstract

The present invention provides a system for providing a cross-lateral junction field effect transistor (114) having desired high-performance desired voltage, frequency or current characteristics. The cross-lateral transistor is formed on a commercial semiconductor substrate (102). A channel structure (124) is formed along the substrate, having source (120) and drain (122) structures laterally formed on opposites sides thereof. A first gate structure (116) is formed along the substrate, laterally adjoining the channel structure orthogonal to the source and drain structures. A second gate structure (118) is formed along the substrate, laterally adjoining the channel structure, orthogonal to the source and drain structures and opposite the first gate stricture.

Claims7

Dependent claims

A method of forming a junction field effect transistor, the method comprising the steps of:

providing a substrate;
forming a channel structure along the substrate;
forming a first gate structure along the substrate laterally adjoining a first side of the first channel structure;
forming a second gate structure along the substrate laterally adjoining a second side of the first channel structure opposite the first gate structure;
forming a first source structure along the substrate laterally adjoining a third side of the first channel structure, orthogonal to the first and second gate structures;
and
forming a first drain structure along the substrate laterally adjoining a fourth side of the first channel structure, opposite the first source structure and orthogonal to the first and second gate structures.

4 more elements

Dependencies are inferred from the claim text.

Versatile system for cross-lateral junction field effect transistor

Life of this patent

Versatile system for cross-lateral junction field effect transistor

Life of this patent

Abstract

Claims7