Method of fabricating silicon-based MEMS devices
AssigneeDALSA Semiconductor Inc.
InventorsLuc Ouellet, Robert Antaki
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Abstract
A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.
Claims16
In a method of fabricating a silicon-based microstructure, the improvement comprising:
- depositing electrically conductive amorphous silicon doped in situ with first and second dopants, said first dopant being selected from the group consisting of arsenic, antimony, and bismuth;
- and said second dopant being phosphorus, and wherein said structure is a laminated structure with alternating first and second layers, each said first layer being doped with said first dopant and being in compressive mechanical stress and each said second layer being doped with said second dopant and being in tensile mechanical stress, and wherein said structure has a residual mechanical stress of less than +/−100 Mpa and a stress gradient of less than +/−20 Mpa/μm.
In a method of fabricating a silicon-based microstructure, the improvement comprising:
- depositing electrically conductive amorphous silicon while simultaneously doping said amorphous silicon in situ with first and second dopants to produce a homogenous structure having a residual mechanical stress of less than +/=100Mpa and bulk resistivity of 0.01 to 1000 mohm.cms , said first dopant being selected from the group consisting of arsenic, antimony, and bismuth;
- and said second dopant being phosphorus.
Dependencies are inferred from the claim text.