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US 7,453,127 B2Granted
Double-diffused-drain MOS device with floating non-insulator spacers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHua-Shu Wu, Feng-Chi Hung, Hung-Lin Chen, Shih-Chin Lee
Life of this patent
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Abstract
A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.
Claims20
A high-voltage metal-oxide-semiconductor device, comprising:
- a gate structure overlying a semiconductor substrate;
- a pair of insulator spacers on the sidewalls of said gate structure respectively;
- wherein the height of the pair of insulator spacers is less than or equal to the height of the gate structure;
- a pair of floating non-insulator spacers enrolled within said pair of insulator spacers respectively such that the height of the floating non-insulator spacers is less than that of the gate structure, wherein each of said floating non-insulator spacers is insulated from said gate structure and said semiconductor substrate by said insulator spacer, and said gate structure does not overlap said insulator spacers and said floating non-insulator spacers;
- a first diffusion extension region with one end aligned with one sidewall of said gate structure and the other end aligned with a field oxide region formed in said semiconductor substrate;
- a drain region in said diffusion extension region,
- wherein a distinct dosage difference exists between said first diffusion extension region and said drain region to construct a double-diffused-drain (DDD) region.
4 more elements
A double-diffused-drain metal-oxide-semiconductor device, comprising:
- a source region and a drain region formed in a semiconductor substrate and spaced apart from each other;
- a gate structure overlying said semiconductor substrate between said source region and said drain region;
- a pair of insulator spacers on the sidewalls of said gate structure respectively;
- wherein the height of the pair of insulator spacers is less than or equal to the height of the gate structure;
- a pair of floating polysilicon spacers embedded in said pair of insulator spacers respectively such that the height of the floating non-insulator spacers is less than that of the gate structure, wherein said gate structure does not overlap said insulator spacers and said floating polysilicon spacers;
- a single lightly doped drain (LDD) region formed in said semiconductor substrate and extending laterally from said source region to one sidewall of said gate structure;
- and
- a diffusion extending region with one end aligned with one sidewall of said gate structure and the other end aligned with a field oxide region formed in said semiconductor substrate and surrounding said drain region.
- wherein a distinct dosage difference exists between said diffusion extension region and said drain region to construct a double-diffused-drain (DDD) region.
6 more elements
A double-diffused-drain metal-oxide-semiconductor device, comprising:
- a source region and a drain region formed in a semiconductor substrate and spaced apart from each other;
- a gate structure overlying said semiconductor substrate between said source region and said drain region;
- a pair of insulator spacers on the sidewalls of said gate structure respectively.
- wherein the height of the pair of insulator spacers is less than or equal to the height of the gate structure;
- a pair of floating polysilicon spacers enrolled within said pair of insulator spacers respectively, such that the height of the floating non-insulator spacers is less than that of the gate structure, wherein said gate structure does not overlap said insulator spacers and said floating polysilicon spacers;
- a first diffusion extending region with one end aligned with one sidewall of said gate structure and the other end aligned with a field oxide region formed in said semiconductor substrate, and surrounding said source region;
- and
- a second diffusion extending region formed in said semiconductor substrate adjacent to the other sidewall of said gate structure, and surrounding said drain region;
- wherein a distinct dosage difference exists between said first diffusion extension region, and
- wherein a distinct dosage difference exists between said second diffusion extension region and said drain region to construct a double-diffused-drain (DDD) region.
7 more elements
Dependencies are inferred from the claim text.