Non-volatile semiconductor memory device

A non-volatile semiconductor memory device comprising:

• a first conductivity type semiconductor substrate (SUB);
• a first conductivity type inversion layer-forming region (CH1) defined in a surface region of said semiconductor substrate (SUB), a channel being formed by an inversion layer therein;
• second conductivity type accumulation layer-forming regions (ACLa, ACLb) formed at least at one side of said inversion layer-forming region (CH1) in the surface region of said semiconductor substrate (SUB), channels being formed by accumulation layers therein;
• a channel-forming region (CH) including said inversion layer-forming region (CH1) and said accumulation layer-forming regions (ACLa, ACLb);
• a first second conductivity type region (S/D1) formed at one side of said channel forming region (CH) in the surface region of said semiconductor substrate (SUB);
• a second second conductivity type region (S/D2) formed at other side of said channel forming region (CH) in the surface region of said semiconductor substrate (SUB);
• an insulating film (GD0) formed on said inversion layer-forming region (CH1) between said accumulation layer-forming regions (ACLa, ACLb);
• a first conductive layer (CL) formed on said insulating film (GD0);
• a charge accumulation film (GD) having a charge accumulation faculty formed directly on an upper surface of said first conductive layer (CL), a side surface of a stacked portion of said insulating film (GD0) and said first conductive layer (CL), an exposure surface of said inversion layer-forming region (CH1), an upper surface of said accumulation layer-forming regions (ACLa, ACLb), and an upper surface of said first and second second conductivity type regions (S/D1, S/D2);
• and
• a second conductive layer (WL) formed directly on said charge accumulation film (GD), said second conductive layer (WL) being a part of a word line, and said first and second second conductivity type regions (S/D1, S/D2) being parts of bit lines (Bla, BLb), respectively,
• wherein
• said first conductivity type is p-type and second conductivity type is n-type.