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US 7,453,115 B2Granted
Dielectric relaxation memory
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Gurtej Sandhu
Life of this patent
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Abstract
A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor structure, allowing the invention to be used as a memory device. A method of forming the trap cites involves an atomic layer deposition of a material at pre-determined areas in the dielectric layer.
Claims13
A method of forming a memory device comprising the acts of:
- forming a capacitive structure, comprising the acts of
- forming a first electrode layer,
- forming a dielectric layer over the first electrode layer,
- forming a second electrode layer over the dielectric layer,
- forming charge trap sites within the dielectric layer, the trap sites each producing a dielectric relaxation current when transitioning between first and second energy states;
- and
- forming an access device for selectively applying a write voltage to the first electrode layer, the write voltage being sufficient to shift the trap sites from the first energy state to the second energy state.
4 more elements
A method of forming a memory device comprising the acts of:
- forming a capacitive structure, comprising the acts of
- forming a first electrode layer,
- forming a first dielectric layer over the first electrode layer,
- forming a trap site layer over the first dielectric layer, said trap site layer comprising trap sites each producing a dielectric relaxation current when transitioning between first and second energy states,
- forming a second dielectric layer over the trap site layer, and
- forming a second electrode layer over the second dielectric layer;
- and
- forming an access device for selectively applying a write voltage to the first electrode layer, the write voltage being sufficient to shift the trap sites from the first energy state to the second energy state.
5 more elements
Dependencies are inferred from the claim text.