Gas distribution showerhead featuring exhaust apertures
AssigneeApplied Materials, Inc.
InventorsSteven Gianoulakis, Karthik Janakiraman
Life of this patent
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Abstract
A method of processing a semiconductor workpiece. The method includes flowing a process gas to a semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate. The method also includes removing gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate.
Claims22
A method of processing a semiconductor workpiece, the method comprising:
- placing the semiconductor workpiece on a susceptor in a processing chamber;
- spinning the semiconductor workpiece;
- flowing a process gas to the semiconductor workpiece through a first plurality of orifices positioned in a gas distribution faceplate;
- and
- removing a gas from over the semiconductor workpiece through a chamber exhaust port and a second plurality of orifices positioned in the gas distribution faceplate, wherein a rate of removal of the gas through the second plurality of orifices increases radially from a center of the semiconductor workpiece.
A method of processing a semiconductor wafer in a chamber comprising:
- inserting a semiconductor wafer into the chamber;
- evacuating the chamber through only a first exhaust port;
- thereafter
- introducing at least one process gas through a first set of orifices located on a surface of a showerhead;
- removing gas through the first exhaust port;
- and
- removing gas through a plurality of orifices positioned on the surface of the showerhead;
- removing gas through the first exhaust port;
- and
- removing gas through a plurality of orifices positioned on the surface of the showerhead.
A method of controlling uniformity of a property of a film deposited on a semiconductor wafer, the method comprising:
- positioning a wafer in a processing chamber;
- introducing gases to the wafer through a first plurality of orifices positioned on a faceplate;
- removing the gases through a second plurality of orifices positioned on the faceplate;
- and
- simultaneously removing the gases across a radial exhaust path, wherein a rate of removing gas across the radial exhaust path is adjusted during processing.
Dependencies are inferred from the claim text.