Etching method and apparatus
AssigneeTokyo Electron Limited
InventorManabu Sato
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Abstract
An etching method, for selectively etching a silicon nitride film to a silicon oxide film by using a processing gas in a processing chamber including an electrode therein, includes the steps of mounting a target object having the silicon oxide film and the silicon nitride film onto the electrode and etching the silicon nitride film by introducing a gaseous mixture containing CF4 gas, H2 gas and N2 gas as a processing gas into the processing chamber and applying a high frequency power of 0.20 W/cm2 or less to the electrode while maintaining a pressure in the processing chamber to be equal to or smaller than 4 Pa.
Claims4
An etching method for selectively etching a silicon nitride film to a silicon oxide film by using a processing gas in a processing chamber including an electrode therein, the method comprising the steps of:
- mounting a target object having the silicon oxide film and the silicon nitride film onto the electrode;
- and
- etching the silicon nitride film by introducing a gaseous mixture containing CF4 gas, H2 gas and N2 gas as a processing gas into the processing chamber and applying a high frequency power of 0.20 W/cm2 or less to the electrode while maintaining a pressure in the processing chamber to be equal to or smaller than 4 Pa.
Dependencies are inferred from the claim text.