Via plug formation in dual damascene process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJen-Chieh Shih, Bang-Ching Ho, Jian-Hong Chen
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Abstract
A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.
Claims23
A method for forming a dual damascene structure in a semiconductor device manufacturing process comprising the steps of:
- providing a process wafer comprising a via opening extending through a dielectric insulating layer thickness;
- forming a resinous polymer plug filling material layer on the process water process surface to include filling the via opening to form a via plug;
- diffusing an acid into the plug filling material layer;
- heating the plug filling material layer to react the acid with the plug filling material layer to form a soluble thickness portion of the plug filling material layer;
- removing the soluble thickness portion in a solvent to leave a remaining thickness portion of the plug filling material layer, said plug filling material layer not subjected to CMP;
- forming a resist layer over the remaining thickness portion of the plug filling material layer;
- photolithographically patterning the resist layer to form a trench etching mask;
- and,
- etching a trench to form a dual damascene structure.
A method for forming a dual damascene structure in a semiconductor device manufacturing process comprising the steps of:
- providing a process wafer comprising a via opening extending through a dielectric insulating layer thickness;
- forming a resinous polymer plug filling material layer on the process wafer process surface to include filling the via opening to form a via plug;
- diffusing an acid into the resinous polymer plug filling material layer;
- heating the plug filling material layer to react the acid with the plug filling material layer to form a soluble thickness portion of the plug filling material layer;
- removing the soluble thickness portion in a developer solution to leave a remaining thickness portion of the resinous plug filling material layer, said plug filling material layer not subjected to CMP;
- curing the remaining thickness portion according to one of a thermal and ultraviolet (UV) irradiation process;
- forming a resist layer over the remaining thickness portion of the resinous plug filling material layer following the step of curing;
- photolithographically patterning the resist layer to form a trench etching mask;
- and, etching a trench to form a dual damascene structure.
Dependencies are inferred from the claim text.