Method of manufacturing semiconductor device having planarized interlayer insulating film
AssigneeElpida Memory, Inc.
InventorTakeo Tsukamoto
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device according to the present invention, comprising the steps of: forming a first insulating film on a substrate that is provided with a structure; forming a second insulating film on the first insulating film; polishing at least the second insulating film; forming a third insulating film on the polished second insulating film; and etching a remaining film including at least the second insulating film or the third insulating film so that an exposed surface of the second insulating film and the third insulating film is parallel with a surface of the substrate.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a first insulating film on a substrate that is provided with a structure;
- forming a second insulating film on said first insulating film;
- polishing at least said second insulating film;
- forming a third insulating film on the polished second insulating film;
- and
- local etching a remaining film including at least one of said second insulating film and said third insulating film such that an exposed surface of said second insulating film and said third insulating film is parallel with a surface of said substrate.
Dependencies are inferred from the claim text.