Metal interconnection structure of a semiconductor device having low resistance and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorsIn Cheol Ryu, Sung-gon Jin
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Abstract
Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an intermetallic dielectric film having a metal contact plug in which a barrier layer, a metal film for contact plug and a second metal film are sequentially disposed, on the first metal film pattern; and a second metal film pattern disposed on the metal contact plug and intermetallic dielectric film and connected to the metal contact plug.
Claims10
A method of fabricating a metal interconnection structure of a semiconductor device having a low resistance, comprising:
- forming a first metal film pattern on an upper part of an insulation film of a semiconductor substrate;
- forming an intermetallic dielectric film on the insulation film and the first metal film pattern;
- removing a portion of the intermetallic dielectric film to form a via-hole exposing a partial surface of the first metal film pattern;
- forming a first metal contact plug having a first specific resistance on the first metal film pattern such that a lower part of the via-hole is embedded;
- forming a metal film having a second specific resistance lower than the first specific resistance on the intermetallic dielectric film and the first metal contact plug within the via-hole;
- and
- patterning the metal film of the upper part of the intermetallic dielectric film to form a second metal contact plug and second metal film pattern embedding the via-hole in conjunction with the first metal contact plug.
Dependencies are inferred from the claim text.