Wafer curvature estimation, monitoring, and compensation
AssigneeTokyo Electron Limited
InventorsSanjeev Kaushal, Kenji Sugishima, Pradeep Pandey
Life of this patent
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Abstract
A method of determining wafer curvature in real-time is presented. The method includes establishing a first temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones. The method further includes positioning a wafer at a first height above the hotplate surface and determining a second temperature profile for the hotplate surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model of a processing system is presented and wafer curvature can be incorporated into the dynamic model.
Claims24
A method of determining wafer curvature in real-time in a system for processing a wafer on a hotplate, the method comprising:
- establishing a first temperature profile for a hotplate surface, wherein the hotplate is divided into a plurality of temperature control zones;
- positioning a wafer at a first height above and in non-contacting relation to the hotplate surface;
- determining a second temperature profile for the hotplate surface based upon the wafer at the first height;
- and
- determining the wafer curvature by using the second temperature profile.
A method of determining wafer curvature in real-time in a system for processing a wafer on a hotplate, the method comprising:
- establishing a first temperature profile for a hotplate surface, wherein the hotplate is divided into a plurality of temperature control zones;
- positioning a wafer at a first height above the hotplate surface;
- determining a second temperature profile for the hotplate surface based upon the wafer at the first height;
- determining the wafer curvature by using the second temperature profile;
- positioning the wafer at a second height above the hotplate surface;
- and
- determining a third temperature profile for the hotplate surface by measuring temperature data at each of the plurality of temperature control zones when the wafer is positioned at the second height.
Dependencies are inferred from the claim text.