Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof

A method of forming a resist pattern comprising:

• forming a resist film on a surface of an object to be processed, by using a resist composition;
• and
• exposing and developing the resist film,
• wherein the resist composition comprises one of a tannin and a derivative thereof, and a polymer at an amount that does not exceed 1/100 in a mass ratio with respect to the solid content of the resist composition, wherein the polymer has a simple repeating unit from a low molecule compound.

A method of manufacturing a semiconductor device comprising:

• forming a resist film on a surface of an object to be processed, by using a resist composition;
• exposing and developing the resist film to form a resist pattern;
• and
• patterning the surface of the object by performing an etching through the resist pattern as a mask,
• wherein the resist composition comprises one of a tannin and a derivative thereof, and a polymer at an amount that does not exceed 1/100 in a mass ratio with respect to the solid content of the resist composition, wherein the polymer has a simple repeating unit from a low molecule compound.