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US 7,452,639 B2Granted
Photomask with photoresist test patterns and pattern inspection method
AssigneeGrace Semiconductor Manufacturing Corporation
InventorKuo-Kuei Fu
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Abstract
A photomask with photoresist test patterns and pattern inspection method using four test patterns on the photomask to perform the exposure on the first photoresist layer in order to adjust the photomask. The present invention prevents misalignment of the first photomask. The information associated with the misalignment is provided to the process engineer based on the location of the test patterns.
Claims14
A photomask with photoresist test patterns, comprising:
- a layout pattern area;
- and
- an external pattern area located surrounding the layout pattern area, said external pattern area comprising:
- first, second, third and fourth alignment pattern areas formed at respective locations of said external pattern area, each of said first, second, third and fourth alignment pattern areas including respective test patterns, wherein said respective test patterns of said first, second, third and fourth alignment pattern areas are distinct each from the other;
- wherein the test patterns of the first alignment pattern area are arranged by using a center of the first alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the first alignment pattern area are picked based on the coordinates (1+4a, 0), (−1−4b, 0), (0, 1+4c), (0, −1−4d), (1+4e, 1+4e), (−1−4f, −1 −4f), (1+4g, −1−4g), and (−1 −4h, 1+4h), and wherein a, b, c, d, e, f, g, and h are natural numbers;
- wherein the test patterns of the second alignment pattern area are arranged by using a center of the second alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the second alignment pattern area are picked based on the coordinates (2+4i, 0), (−2−4j, 0), (0, 2+4k), (0, −2−4l), (2+4m, 2+4m), (−2−4n, −2−4n), (2+4p, −2−4p), and (−2−4q, 2+4q), and wherein i, j, k, l, m, n, p, and q are natural numbers;
- wherein the test patterns of the third alignment pattern area are arranged by using a center of the third alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the third alignment pattern area are picked based on the coordinates (3+4r, 0), (−3−4s, 0), (0, 3+4t), (0, −3−4u), (3+4v, 3+4v), (−3−4w, −3−4w), (3+4z, −3−4z), and (−3−4A, 3+4A), and wherein r, s, t, u, v, w, z and A are natural numbers;
- and
- wherein the test patterns of the fourth alignment pattern area are arranged by using a center of the fourth alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the fourth alignment pattern area are picked based on the coordinates (4+4B, 0), (−4−4C, 0), (0, 4+4D), (0, −4−4E), (4+4F, 4+4F), (−4−4G, −4−4G), (4+4H,−4−4H), and (−4−4I, 4+4I), and wherein B, C, D, E, F, G, H and I are natural numbers.
6 more elements
An inspection method of photoresist test patterns, comprising:
- providing a silicon substrate having a photoresist layer formed thereon;
- performing a step exposure on the photoresist layer by using a photomask with a layout pattern area and an external pattern area, wherein the external pattern area is located surrounding the layout pattern area, the external pattern area comprising:
- first, second, third and fourth alignment pattern areas formed at respective locations of said external pattern area, each of said first, second, third and fourth alignment pattern areas including respective test patterns, wherein said respective test patterns of said first, second, third and fourth alignment pattern areas are distinct each from the other;
- wherein the test patterns of the first alignment pattern area are arranged by using a center of the first alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the first alignment area are picked based on the coordinates (1+4a, 0), (−1−4b, 0), (0, 1+4c), (0, −1−4d), (1+4e, 1+4e), (−1−4f, −1−4f), (1+4g, −1−4g), and (−1−4h, 1+4h), and wherein a, b, c, d, e, f, g, and h are natural numbers;
- wherein the test patterns of the second alignment pattern area are arranged by using a center of the second alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the second alignment pattern area are picked based on the coordinates (2+4i, 0), (−2−4j, 0), (0, 2+4k), (0, −2−4l), (2+4m, 2+4m), (−2−4n, −2−4n), (2+4p, −2−4p), and (−2−4q, 2+4q), and wherein i, j, k, l, m, n, p, and q are natural numbers;
- wherein the test patterns of the third alignment pattern area are arranged by using a center of the third alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the third alignment pattern area are picked based on the coordinates (3+4r, 0), (−3−4s, 0), (0, 3+4t), (0, −3−4u), (3+4v, 3+4v), (−3−4w, −3−4w), (3+4z, −3−4z), and (−3−4A, 3+4A), and wherein r, s, t, u, v, w, z and A are natural numbers;
- and
- wherein the test patterns of the fourth alignment pattern area are arranged by using a center of the fourth alignment pattern area as a coordinate axis (0, 0), and the points of the test patterns of the fourth alignment pattern area are picked based on the coordinates (4+4B, 0), (−4−4C, 0), (0, 4+4D), (0, −4−4E), (4+4F, 4+4F), (−4−4G, −4−4G), (4+4H,−4−4H), and (−4−4I, 4+4I), and wherein B, C, D, E, F, G, H and I are natural numbers;
- and
- developing the photoresist layer to form a layout pattern and a photoresist test pattern.
7 more elements
Dependencies are inferred from the claim text.