Fuse box of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorHyung Suk Choi
Life of this patent
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Abstract
A fuse box of a semiconductor device is provided. More specifically, provided is a device of forming a uniformly residual oxide film by rearranging fuse boxes in consideration of an etching ratio depending on plasma density of the semiconductor device to prevent a fuse attack. During a repair etching process to open a fuse box in a chip, an etching loading effect is evenly reflected depending on pattern density of the fuse box so that the residual oxide film is regularly distributed in each fuse of all fuse boxes regardless of the size of an open region. As a result, the fuse attack resulting from an excessive etching process on the oxide film on a small fuse is prevented in fuse blowing to improve yield of FTA (Fixed To Attempt) yield.
Claims9
A fuse box of a semiconductor device comprising:
- a plurality of bank regions formed on a die;
- a plurality of fuse box sets formed in a peripheral circuit region disposed between neighboring bank regions, each fuse box set including a first fuse box and a second fuse box which adjoin each other, wherein the first fuse box has a different size from the second fuse box;
- and
- a plurality of test mode fuse boxes disposed on each inner corner of the die,
- wherein the plurality of fuse box sets are spaced apart from one another by a predetermined distance in a peripheral circuit region so that the plurality of fuse boxes are formed with a uniform pattern density.
Dependencies are inferred from the claim text.