Method for predicting a critical dimension of a feature imaged by a lithographic apparatus

A lithographic apparatus, comprising:

• an illuminator configured to condition a beam of radiation;
• a support configured to hold a patterning device, the patterning device configured to pattern the beam according to a desired pattern;
• a substrate table configured to hold a substrate;
• a projection system configured to project the patterned beam onto a target portion of the substrate to form a patterned image on the substrate;
• a sensor configured and arranged to intercept a portion of the beam and to measure a transmission of the beam through at least a portion of the patterning device;
• and
• a calculator configured to convert a transmission measurement of the sensor into critical dimension data of the patterning device.

A method for predicting a critical dimension of a feature imaged by a lithographic apparatus using a model, comprising:

• inputting at least one data parameter selected from the group consisting of a pupil measurement, a projection system aberration, a radiation dose profile, a focus profile, or any combination of the foregoing into the model;
• performing a spot sensor enabled patterning device measurement to obtain a patterning device information data related to critical dimension;
• inputting the patterning device information data into the model;
• inputting process information data related to critical dimension metrology into the model;
• and
• converting the input data to substrate critical dimension uniformity data by using a plurality of simulated and/or measured data of at least one of Bossung curves and patterning device error factors.