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US 7,443,017 B2Granted
Package having bond-sealed underbump
AssigneeHewlett-Packard Development Company, L.P.
InventorsCharles C. Haluzak, Martha A. Truninger, Donald L. Michael
Life of this patent
Estimating the term…
Abstract
A package for containing microelectromechanical devices includes a first substrate wafer, and a second substrate wafer made of an optical quality material. An underbump is interposed between the first and second substrate wafers. The underbump is composed of a standoff region and a localized bond region. The first and second substrate wafers and the underbump define a chamber that contains at least one microelectronic device.
Claims17
A microelectromechanical device package, comprising:
- a first substrate wafer;
- a second substrate wafer, the second substrate wafer composed of an optical quality material;
- and
- an underbump interposed between the first substrate wafer and the second substrate wafer, the underbump composed of a standoff region and a localized bond region, wherein the standoff region is a dielectric material having a higher melting temperature than a material used for the localized bond region, wherein the first and second substrate wafers and underbump define a chamber, and wherein the underbump includes at least one fill port defined therein extending from an outer surface of the package to the chamber, the fill port having a metallized surface and being adapted to be sealed;
- and
- at least one microelectronic device operatively disposed within the chamber.
3 more elements
An integrated circuit, comprising:
- a semiconductor substrate;
- an optical quality glass substrate positioned a spaced distance from the semiconductor substrate;
- an underbump interposed between the semiconductor substrate and the optical quality glass substrate, the underbump composed of a standoff region and a localized high-temperature bond region, wherein the semiconductor substrate, the optical quality glass substrate and the underbump define a chamber, wherein the standoff region is a dielectric material having a higher melting temperature than a material used for the localized high-temperature bond region, and wherein the underbump includes at least one fill port defined therein extending from an outer surface of the package to the chamber, the fill port having a metallized surface and adapted to be hermetically sealed by soldering;
- and
- at least one microelectromechanical device operatively disposed within the chamber.
2 more elements
A microelectromechanical device package, comprising:
- a first substrate;
- a second substrate;
- means for connecting the first substrate to the second substrate, the connecting means interposed between the first and second substrates such that the first and second substrates are positioned a spaced distance from one another and define at least one chamber therebetween, wherein the connecting means includes a standoff region and a localized bond region, and wherein the standoff region is a dielectric material having a higher melting temperature than a material used for the localized bond region;
- means, defined within the connecting means, for filling the chamber with at least one of a functional fluid or gas after the first and second substrates are connected;
- and
- means for performing at least one microelectromechanical function, the microelectromechanical function performing means operatively disposed in the chamber.
3 more elements
Dependencies are inferred from the claim text.