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US 7,442,980 B2Granted
Anti-punch-through semiconductor device
AssigneePowerchip Semiconductor Corp.
InventorsLiang-Chuan Lai, Pin-Yao Wang
Life of this patent
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Abstract
An anti-punch-through semiconductor device is provided. The anti-punch-through semiconductor device includes a substrate, at least an isolation region and a plurality of trench devices. The trench device is disposed in the substrate. The trench device includes a source/drain region. The source/drain region of the trench device is disposed at the bottom of the trench device. The isolation region is disposed in the substrate and between the source/drain regions of each trench device.
Claims6
An anti-punch-through semiconductor device, comprising:
- a silicon layer;
- a plurality of trench devices, disposed in the silicon layer, wherein the trench device comprises a source/drain region, and the source/drain region is disposed in the bottom of the trench device;
- and s
- at least one insulation region, covered by the silicon layer and disposed between the source/drain regions of each trench device.
1 more element
Dependencies are inferred from the claim text.