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US 7,442,650 B2Granted
Methods of manufacturing semiconductor structures using RIE process
AssigneeInternational Business Machines Corporation
InventorsPeter Biolsi, Samuel S Choi, Kevin Mackey
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Abstract
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio during plasma generation and etching. Plasma generation is induced by a source radio frequency and anisotropic etch performance is induced by a second bias radio frequency.
Claims1
A method comprising:
- adjusting a pressure inside a chamber;
- introducing a first gas and a second gas into the chamber for etching a layer above a bonding layer;
- adjusting a flow rate of the first gas and the second gas to a predetermined flow ratio;
- applying a source radio frequency (RF) having a predetermined source power;
- and applying a bias RF having a predetermined bias power,
- wherein conditions for etching titanium nitride are 3000 Watts at 13.56 MHz bias frequency, 500 Watts at 60 MHz source at a pressure of 30 millitorr and a mixture of the first gas of tetrafluoromethane and the second gas of argon at a flow rate ratio of 50 cm3/min:1400 cm3/min.
3 more elements
Dependencies are inferred from the claim text.