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US 7,442,649 B2Granted
Etch with photoresist mask
AssigneeLam Research Corporation
InventorsJisoo Kim, Sangheon Lee, Binet A. Worsham, Robert Charatan, S.M. Reza Sadjadi
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Abstract
A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
Claims12
A method for etching a low-k dielectric layer over a substrate, comprising:
- forming a photoresist mask over the low-k dielectric layer;
- placing the substrate in a plasma processing chamber:
- providing an etchant gas consisting essentially of NF3 and an inert diluent into the plasma chamber;
- forming a plasma from the etchant gas;
- and
- etching the dielectric layer through the photoresist mask with the plasma from the etchant gas.
3 more elements
A method for etching a dielectric layer over a substrate comprising:
- forming a photoresist mask no more than 400 nm thick over the dielectric layer;
- placing the substrate in a plasma processing chamber;
- providing an etchant gas consisting essentially of and a diluent into the plasma chamber;
- forming a plasma from the NF3 gas;
- and
- etching the dielectric layer through the photoresist mask with the plasma from the NF3 gas.
3 more elements
Dependencies are inferred from the claim text.