Method of forming plug of semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorsHan-Choon Lee, Jin-Woo Park
Life of this patent
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Abstract
A method for forming a plug of a semiconductor device according to a preferred embodiment includes forming a metal wiring on a semiconductor substrate, forming an interlayer dielectric layer on the semiconductor substrate having the metal wiring, forming a contact hole for partially exposing the metal wiring by selectively etching the interlayer dielectric layer, annealing the semiconductor substrate having the contact hole using NH3 gas, plasma processing the annealed semiconductor substrate using the NH3, and forming a barrier layer on the interlayer dielectric layer having the contact hole.
Claims22
A method for forming a plug in a semiconductor device comprising:
- annealing a semiconductor substrate in a chamber in an environment containing NH3 gas, the semiconductor substrate having thereon a metal wiring, an interlayer dielectric layer on or over the metal wiring, and a contact hole in the interlayer dielectric layer partially exposing the metal wiring;
- plasma processing the annealed semiconductor substrate including the contact hole in the interlayer dielectric layer and the exposed metal wiring in-situ in the chamber in the presence of NH3 sufficiently to remove a polymer on the exposed metal wiring;
- and
- forming a barrier layer on the interlayer dielectric layer and in the plasma processed contact hole in-situ in the chamber.
A method for forming a plug in a semiconductor device comprising:
- annealing a semiconductor substrate in a chamber in an environment containing NH3 gas or N2 H4 the semiconductor substrate having thereon a metal wiring, an interlayer dielectric layer on or over the metal wiring, and a contact hole in the interlayer dielectric layer partially exposing the metal wiring;
- plasma processing the annealed semiconductor substrate including the contact hole in the interlayer dielectric layer and the exposed metal wiring in-situ in the chamber in the presence of said NH3 gas or N2H4 sufficiently to remove a polymer on the exposed metal wiring;
- and
- forming a barrier layer on the interlayer dielectric layer and in the plasma processed contact hole in-situ in the chamber.
Dependencies are inferred from the claim text.