Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTakayuki Ito
Life of this patent
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Abstract
An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a plurality areas defined laterally in the substrate through a bottom surface of the substrate; and a light source facing a top surface of the substrate, configured to irradiate a pulsed light at a pulse width of about 0.1 ms to about 100 ms on the entire top surface of the substrate.
Claims16
A method for annealing a substrate, comprising:
- individually preheating each of a plurality of areas defined laterally in the substrate;
- and
- irradiating an entire top surface of the substrate with a pulsed light at a pulse width of about 0.1 ms to about 100 ms, in synchronization with the preheating;
- wherein the areas include a first area assigned at a central part of the substrate and a second area outside the first area including an edge of the substrate.
A method for annealing a substrate, comprising:
- individually preheating each of a plurality of areas defined laterally in the substrate;
- and
- irradiating an entire top surface of the substrate with a pulsed light at a pulse width of about 0.1 ms to about 100 ms, in synchronization with the preheating;
- wherein the areas include semicircular first and second areas which are allocated in a mirror symmetry with respect to a diameter of the substrate.
A method for manufacturing a semiconductor device, comprising:
- defining laterally a plurality of areas in a semiconductor substrate;
- treating the semiconductor substrate by a first manufacturing process including:
- individually preheating each of the areas;
- and
- irradiating an entire top surface of the semiconductor substrate with a pulsed light at a pulse width of about 0.1 ms to about 100 ms, in synchronization with the preheating;
- and
- treating the semiconductor substrate by a second manufacturing process;
- wherein the areas include a first area assigned at a central part of the semiconductor substrate and a second area outside the first area including an edge of the semiconductor substrate.
A method for manufacturing a semiconductor device, comprising:
- defining laterally a plurality of areas in a semiconductor substrate;
- treating the semiconductor substrate by a first manufacturing process including:
- individually preheating each of the areas;
- and
- irradiating an entire top surface of the semiconductor substrate with a
- pulsed light at a pulse width of about 0.1 ms to about 100 ms, in
- synchronization with the preheating;
- and
- treating the semiconductor substrate by a second manufacturing process;
- wherein the areas include semicircular first and second areas which are allocated in a mirror symmetry with respect to a diameter of the semiconductor substrate.
Dependencies are inferred from the claim text.