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US 7,442,610 B2Granted
Low thermal budget fabrication method for a mask read only memory device
AssigneeMacronix International Co., Ltd.
InventorsShui-Chin Huang, Jen-Chuan Pan
Life of this patent
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Abstract
A low thermal budget fabrication method for a mask ROM is described. The method includes providing a substrate having a gate oxide layer thereon. A first conductive layer is formed on the gate oxide layer. A plurality of bit lines is formed in the substrate. A second conductive layer is then formed on the first conductive layer, followed by forming a plurality of ROM codes in the substrate.
Claims24
A low thermal budget fabrication method for a mask ROM device, the method comprising:
- providing a substrate that already comprises a gate oxide layer;
- forming a blanket first conductive layer on the gate oxide layer;
- forming a plurality of bit lines in the substrate by implanting ions through the gate oxide layer and a portion of the blanket first conductive layer;
- forming a second conductive layer directly on the blanket first conductive layer without patterning the blanket first conductive layer, so that the second conductive layer is in direct contact with the blanket first conductive layer and completely separated from the gate oxide layer by the blanket first conductive layer;
- and
- forming a plurality of ROM codes in the substrate.
3 more elements
A low thermal budget fabrication method for a mask ROM, comprising:
- providing a substrate having a gate oxide layer thereon;
- forming a blanket first conductive layer on the gate oxide layer;
- forming a plurality of bit lines in the substrate by implanting ions to at least a region of the substrate through a portion of the blanket first conductive layer;
- and
- forming a second conductive layer directly on the blanket first conductive layer without patterning the blanket first conductive layer, so that the second conductive layer is in directly contact with the blanket first conductive layer and completely separated from the gate oxide layer by the blanket first conductive layer.
2 more elements
Dependencies are inferred from the claim text.