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US 7,442,608 B2Granted
Methods of fabricating a semiconductor device using angled implantation
AssigneeMicron Technology, Inc.
InventorBrian F. Lawlor
Life of this patent
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Abstract
Methods of fabricating structures, such as memory cell structures by exposing at least one edge portion of an intermediate nitride layer arranged between a polysilicon layer and a tungsten layer and performing an angled implant at the at least one edge portion to form a doped region through the at least one edge portion of the intermediate nitride layer is provided. The intermediate nitride layer may be formed by an anneal process, for example.
Claims24
A method of fabricating a memory cell structure comprising:
- exposing at least one edge portion of an intermediate nitride layer arranged between a polysilicon layer and a tungsten layer;
- and
- performing an angled implant at the at least one edge portion to form a doped region through the at least one edge portion of the intermediate nitride layer.
A method of fabricating a semiconductor device comprising:
- forming a semiconductor structure;
- forming a metal structure adjacent to the polysilicon structure;
- performing an anneal operation to form an intermediate material between the semiconductor structure and the metal structure;
- and
- performing an implant operation to dope at least a portion of the intermediate material.
2 more elements
A method of fabricating a semiconductor device comprising:
- forming a polysilicon layer;
- forming a tungsten layer adjacent to the polysilicon layer;
- performing an anneal operation to form an intermediate nitride layer between the polysilicon layer and the tungsten layer;
- exposing an edge of the intermediate nitride layer;
- and
- performing an implant operation to dope at least a portion of the edge of the intermediate nitride layer.
3 more elements
Dependencies are inferred from the claim text.