Method of manufacturing a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorIn No Lee
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate in which a floating gate pattern is formed. A dielectric layer, a conductive layer for a control gate, a tungsten silicide layer, a first silicon oxynitride layer, a hard mask layer, a second silicon oxynitride layer and an Organic Bottom Anti-Reflective Coating (BARC) layer are formed over the semiconductor substrate including the floating gate pattern. The BARC layer, the second silicon oxynitride layer, the hard mask layer and the first silicon oxynitride layer are removed. The tungsten silicide layer and the conductive layer for the control gate are removed. The dielectric layer is removed to form spacers on sides of the floating gate. The floating gate is then removed.
Claims25
A method of manufacturing a semiconductor device, the method comprising:
- providing a semiconductor substrate in which a floating gate pattern is formed;
- forming a dielectric layer over the floating gate pattern, a conductive layer for a control gate over the dielectric layer, a tungsten silicide layer over the conductive layer, a first silicon oxynitride layer over the tungsten silicide layer, a hard mask layer over the first silicon oxynitride layer, a second silicon oxynitride layer over the hard mask layer and an Organic Bottom Anti-Reflective Coating (BARC) layer over the second silicon oxynitride layer;
- partially etching the BARC layer, the second silicon oxynitride layer, the hard mask layer and the first silicon oxynitride layer;
- partially etching the tungsten silicide layer and the conductive layer for the control gate;
- partially etching the dielectric layer to form spacers on sides of the floating gate;
- and partially etching the floating gate pattern.
Dependencies are inferred from the claim text.