Method for forming a semiconductor device having a fin and structure thereof
AssigneeFreescale Semiconductor, Inc.
InventorMarius K. Orlowski
Life of this patent
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Abstract
A method for forming a semiconductor device includes providing a semiconductor layer, forming a passivation layer over the semiconductor layer, wherein the passivation layer has an opening having sidewalls, forming a fin over the semiconductor layer, wherein after forming the passivation layer the fin is within the opening, and forming a portion of a gate within the opening. In one embodiment, a dummy gate is used. In one embodiment, spacers are formed within the opening of the passivation layer. The structure is also discussed.
Claims15
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor layer;
- forming a passivation layer over the semiconductor layer, wherein the passivation layer has an opening having sidewalls;
- forming a fin over the semiconductor layer, wherein after forming the passivation layer the fin is within the opening;
- forming a portion of a gate within the opening;
- and
- forming spacers along the sidewalls of the opening.
A method of forming a semiconductor device, comprising:
- forming a semiconductor layer;
- forming a passivation layer over the semiconductor layer, wherein the passivation layer has an opening and wherein the opening has sidewalls;
- forming a fin over the semiconductor layer, wherein after forming the passivation layer the fin is within the opening of the passivation layer;
- forming a spacer adjacent the sidewalls of the opening of the passivation;
- and
- forming a gate, wherein a portion of the gate is within the opening of the passivation layer.
Dependencies are inferred from the claim text.