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US 7,442,473 B2Granted
Method for forming mask pattern of semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJun Seok Lee
Life of this patent
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Abstract
A method for forming a mask pattern of a semiconductor device is disclosed. An example method arranges a main pattern and arranges a first fine auxiliary pattern in the vicinity of the main pattern. The example method also arranges a second fine auxiliary pattern in the vicinity of edges of the main pattern. In the example method, the second fine auxiliary pattern has a predetermined tilt angle with respect to the first fine auxiliary pattern.
Claims3
A method for forming a mask pattern of a semiconductor device, comprising:
- arranging a main pattern;
- arranging at least three first fine auxiliary patterns in the vicinity of the main pattern, wherein the first fine auxiliary patterns have a line width of 0.03 to 0.12 μm and oblique sides of the first fine auxiliary patterns are perpendicular to an edge of the main pattern;
- arranging at least three second fine auxiliary patterns in the vicinity of edges of the main pattern, the second fine auxiliary patterns having a predetermined tilt angle with respect to the first fine auxiliary patterns, oblique sides that are perpendicular to an edge of the main pattern and an oblique side that is substantially perpendicular to an edge of the first fine auxiliary patterns, and a line width of 0.03 to 0.12 μm, arranged such that the second fine auxiliary patterns are isolated from the first fine auxiliary patterns by a distance of more than 0.02 μm;
- and
- a third fine auxiliary pattern having a tilt angle of about 45 degrees with respect to the first fine auxiliary patterns.
2 more elements
Dependencies are inferred from the claim text.