Method for producing silicon single crystals and silicon single crystal produced thereby
AssigneeSumco Corporation
InventorsShuichi Inami, Hiroki Murakami, Nobumitsu Takase, Ken Hamada, Tsuyoshi Nakamura
Life of this patent
Estimating the term…
Abstract
This method for producing silicon single crystals includes: growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis, wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form. This silicon single crystal is produced by the above method.
Claims13
A method for producing silicon single crystals, the method comprising:
- growing a silicon single crystal by the Czochralski method while cooling at least part of the silicon single crystal under growth with a cooling member which circumferentially surrounds the silicon single crystal and has an inner contour that is coaxial with a pull axis,
- wherein an ambient gas in which the silicon single crystal is grown includes a hydrogen-atom-containing substance in gaseous form, and
- wherein the molecular hydrogen-equivalent concentration of the gaseous hydrogen-atom-containing substance being α and the oxygen gas concentration being β, the concentration of oxygen gas in the ambient gas is made to satisfy the relationship:
- α−2β>3 vol %.
Dependencies are inferred from the claim text.