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US 7,442,038 B2Granted
Heat treatment jig for semiconductor silicon substrate
AssigneeSumitomo Mitsubishi Silicaon Corporation
InventorNaoshi Adachi
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Abstract
This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a result of the stress caused by the weight of the wafer itself or the deflection of the heat treatment jig itself.
Claims1
A heat treatment jig for a semiconductor silicon substrate comprising:
- a plate-like heat treatment jig that can carry a silicon substrate comprising:
- a central protrusion, provided at and over the center of the plate-like jig, for supporting a central portion of a backside of the substrate;
- and
- at least one circular-arc part for supporting the backside of the substrate;
- wherein the central projecting part is lower than the circular-arc part or parts such that stress caused by the substrate's own weight is efficiently dispersed.
2 more elements
Dependencies are inferred from the claim text.