System and method for controlling constant power dissipation
AssigneesInfineon Technologies AG, Altis Semiconductor
InventorsUlrich Klostermann, Dietmar Gogl
Life of this patent
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Abstract
A method for controlling the constant power dissipation of a memory cell includes initially measuring the resistance of the memory cell, and subsequently controlling a source to apply a variable level of current or voltage to the memory cell. The variable level of the applied current or voltage is determined in proportion to the measured resistance of the memory cell so as to result in a predefined level of power dissipation within the memory cell, said dissipated power operable to heat the memory cell.
Claims28
A method for controlling the constant power dissipation of a memory cell, the method comprising:
- measuring resistance of a memory cell;
- and
- controlling a source to apply a variable level of current or voltage to the memory cell, the variable level of current or voltage determined in proportion to the measured resistance of the memory cell so as to result in a predefined level of power dissipation within the memory cell, said dissipated power operable to heat the memory cell.
A system configured to control constant power dissipation of a memory cell, the system comprising:
- means for measuring the resistance of the memory cell;
- and
- means for controlling a source to apply a variable level of current or voltage to the memory cell, the variable level of current or voltage determined in proportion to the measured resistance of the memory cell so as to result in a predefined level of power dissipation within the memory cell, said dissipated power operable to heat the memory cell.
A memory array, comprising:
- a plurality of magneto random access memory cells, each magneto random access memory cell coupled between a word line and a bit line;
- and
- a system coupled to the bit line and configured to control power dissipation of one or more memory cells coupled to said bit line, the system comprising:
- means for measuring resistance of the selected memory cell;
- and
- means for controlling a source to apply a variable level of current or voltage to the selected memory cell, the variable level of current or voltage determined in proportion to the measured resistance of the selected memory cell so as to result in a predefined level of power dissipation within the selected memory cell, said dissipated power operable to heat the selected memory cell.
A computer program product, resident on a computer readable medium, operable to store executable instructions for controlling the constant power dissipation of a memory cell, the computer program product comprising:
- instruction code to cause measurement of the resistance of the memory cell;
- and
- instruction code to control a source to apply a variable level of current or voltage to the memory cell, the variable level of current or voltage determined in proportion to the measured resistance of the memory cell so as to result in a predefined level of power dissipation within the memory cell, said dissipated power operable to heat the memory cell.
Dependencies are inferred from the claim text.