Semiconductor memory device having a redundancy information memory directly connected to a redundancy control circuit

A method for operating a semiconductor memory device, the method comprising:

• providing a memory array having a plurality of memory cells, a redundancy array having a plurality of memory cells, a non-volatile redundancy information memory having a plurality of memory cells for storing redundancy information, and a redundancy control unit;
• receiving an address;
• reading the redundancy information stored in the non-volatile redundancy information memory directly into the redundancy control unit by means of at least one sense amplifier;
• and
• selecting either a memory cell in the memory array or a memory cell in the redundancy array for one of a read, write and erase operation by means of the redundancy control unit and depending on the redundancy information that corresponds to the address received;
• and
• performing a memory operation comprising accessing the memory cell in the memory array with the at least one sense amplifier if the memory array is selected.

A semiconductor memory device, comprising:

• a memory array having a plurality of memory cells;
• a redundancy array having a plurality of memory cells;
• a non-volatile redundancy information memory having a plurality of memory cells for storing redundancy information;
• a data bus;
• at least one sense amplifier, the at least one sense amplifier coupled to the memory array and the non-volatile redundancy information memory;
• access circuitry coupled between the memory array and the data bus and also between the redundancy array and the data bus;
• and
• a redundancy control unit coupled to the access circuitry, the redundancy control unit also being coupled to the non-volatile redundancy information memory through at least one line that is separate from the data bus.