Nonvolatile memory cell having current compensated for temperature dependency and data read method thereof

A nonvolatile semiconductor memory device comprising:

• a memory cell array having memory cells arranged in a matrix form,
• a read circuit configured to read data from a memory cell in the memory cell array,
• a program circuit configured to program data into the memory cell in the memory cell array,
• a read voltage generating circuit configured to generate and supply a read voltage to the read circuit, the read voltage generating circuit including a first constant current source which is connected to an output terminal and supplies a first constant current substantially independent of a temperature variation to the output terminal or discharges the first constant current from the output terminal, a first temperature-dependent current source which is connected to the output terminal and supplies a first temperature-dependent current depending on a temperature variation to the output terminal or discharges the temperature-dependent current from the output terminal, and a current/voltage converter connected to the output terminal,
• a memory circuit configured to store information used to change a temperature characteristic of the memory cell in the memory cell array, and
• a switching circuit configured to switch temperature dependency of the read voltage generated by the read voltage generating circuit based on information stored in the memory circuit.