Low-loss rectifier with shoot-through current protection

A transistor active bridge circuit connectable between a pair of input lines and a pair of output lines, comprising:

• first and second field effect transistors of a first channel type, a source-drain path of said first field effect transistor connected in series with a source-drain path of said second field effect transistor to form a first series transistor combination connected across said input lines;
• third and fourth field effect transistors of a second channel type different from said first channel type, a source-drain path of said third field effect transistor connected in series with a source-drain path of said fourth field effect transistor to form a second series transistor combination connected across said input lines;
• a voltage divider provided for each of said field effect transistors, said voltage divider connected in series from a source of each said field effect transistor to one of said input lines;
• an output tap of each said voltage divider configured for providing an output voltage that is reduced relative to an input voltage applied to each said voltage divider, each said output tap respectively connected to a gate of each of said field effect transistors;
• and
• a shoot-through protection circuit means for preventing said first and second field effect transistors from simultaneously conducting and for preventing said third and fourth field effect transistors from simultaneously conducting.

A transistor active bridge circuit connectable between a pair of input lines and a pair of output lines, comprising:

• a field effect transistor bridge rectifier circuit comprised of a plurality of field effect transistors;
• a voltage divider provided for each of said plurality of field effect transistors, said voltage divider comprised of a first resistor and a second resistor connected in series from a source of each said field effect transistor to one of said input lines;
• a bias voltage tap defined at a connection point between said first and second resistors connected to a gate of each of said field effect transistors;
• and
• a shoot-through protection circuit for each of said plurality of field effect transistors, said shoot-through protection circuit comprising at least one active device connected across a gate and a source of each of said plurality of field effect transistors.