Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

An apparatus for processing a semiconductor wafer which performs a predetermined processing, as to a film on a surface of the semiconductor wafer to be processed disposed on a sample stand within a vacuum chamber, by using plasma generated within the vacuum chamber, comprising:

• a light source which emits light having multiple wavelengths within the vacuum chamber;
• a port which is disposed so as to face on an inner surface of the vacuum chamber and through which light is transmitted from an inside of the vacuum chamber;
• a light receiving unit which receives, through the port, interference lights of multiple wavelengths reflected from the surface of the semiconductor wafer based on the light emitted from the light source during the processing of the semiconductor wafer;
• and
• a detecting device which detects a processed amount of the film during the processing of the semiconductor wafer based on a first pattern and a second pattern, wherein the first pattern is obtained by measuring intensities of the interference lights of multiple wavelengths received by the light receiving unit and obtaining a pattern of differential values of the measured interference light intensities using a wavelength as a parameter as the first pattern, and the second pattern is a pattern of differential values of intensities of interference lights of multiple wavelengths with respect to a predetermined processed amount of the film actually obtained in advance as to a sample semiconductor wafer having substantially same configuration as the semiconductor wafer.

An apparatus for processing a semiconductor wafer which performs a predetermined processing, as to a film on a surface of the semiconductor wafer to be processed disposed on a sample stand within a vacuum chamber, by using plasma generated within the vacuum chamber, comprising:

• a light source which emits light having multiple wavelengths within the vacuum chamber;
• a port which is disposed so as to face on an inner surface of the vacuum chamber and through which light is transmitted from an inside of the vacuum chamber;
• a light receiving unit which receives, through the port, interference lights of multiple wavelengths reflected front the surface of the semiconductor wafer based on the light emitted from the light source during the processing of the semiconductor wafer;
• and
• a detecting device which measures intensities of the interference lights of multiple wavelength, then detects differential values of the measured interference light intensities, then obtains a range of a processing amount of the film by using a first zero-cross pattern which is formed by points where the differential values of the measured interference light intensities as to a first wavelength among the interference lights of multiple wavelength cross a zero value of the differential values, and detects a processed amount of the film during the processing of the semiconductor wafer from the obtained range of the processing amount of the film by using a second zero-cross pattern which is formed by points where the differential values of the measured interference light intensities as to a second wavelength among the interference lights of multiple wavelength cross the zero value of the differential values.