Passivation film of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSang Deok Kim
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Abstract
Disclosed are a method of manufacturing a semiconductor device and a structure of a semiconductor device. A method of forming a passivation film of a semiconductor device comprises the steps of forming metal wires on a semiconductor substrate, forming a buffer oxide film being a first passivation film on the metal wires, wherein the buffer oxide film can mitigate damage by plasma, forming a high density plasma film being a second passivation film on the buffer oxide film, and forming a third passivation film on the second passivation film. According to the present invention, it is possible to significantly reduce the leakage current between a select source line and a common source line.
Claims5
A structure of a passivation film of a semiconductor device, comprising:
- a buffer oxide film formed on a semiconductor substrate in which metal wires are formed along steps formed by the metal wires, wherein the buffer oxide film mitigates damage by plasma;
- a high density plasma (HDP) film formed on the buffer oxide film in a thickness sufficient to fill gaps between the metal wires;
- and
- a nitride film formed on the HDP film, wherein the nitride film prevents moisture from infiltrating from the outside, wherein the structure of the passivation film has a three-layered structure comprising the buffer oxide film, the HDP film, and the nitride film.
Dependencies are inferred from the claim text.