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US 7,411,267 B2Granted
Semiconductor integrated circuit device
AssigneeRenesas Technology Corp.
InventorsKentaro Yamawaki, Yoshihiko Yasu, Yasuto Igarashi, Takashi Kuraishi, Kazumasa Yanagisawa
Life of this patent
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Abstract
The invention provides a semiconductor integrated circuit device with improved designing efficiency while achieving higher functions. An inner circuit is surrounded by a plurality of cells in which a first switch element for connecting a power supply voltage line or a ground voltage supply line to a power supply line of an internal circuit is disposed below power supply lines extending in a first and second directions, and the power lines are connected together.
Claims7
A semiconductor integrated circuit device comprising:
- a plurality of internal circuits;
- a first cell including a first pair of power supply lines constructed by a power supply voltage line and a ground voltage supply line of the circuit which extend in parallel in a first direction, and a first switch elements disposed in a lower layer including a semiconductor substrate of the first pair of power supply line and provided between said power supply voltage line and said ground voltage supply line of the circuit and a corresponding power supply line of said internal circuit;
- a second cell including a pair of second power supply lines constructed by a power supply voltage line and an ground voltage supply line of the circuit which extend in parallel in a second direction orthogonal to said first direction, and either a second switch element or a third switch element, the second switch element being disposed in a lower layer including the semiconductor substrate of the pair of second power supply lines and provided between a first bias line connected to a first well region in which a MOSFET of a first conduction type of said internal circuit is to be formed and a first back bias line, and the third switch element being provided between a second bias line connected to a second well region in which a MOSFET of a second conduction type is to be formed and a second back bias line;
- and
- a third cell positioned at an outside of a corner of a device region in which said internal circuit is to be formed, and having a plurality of kinds of elements including a corner power supply line connecting said first and second pair of power supply lines, the power supply voltage line, and the ground voltage supply line, a power supply switch controller disposed in a lower layer including a semiconductor substrate of the corner power supply line and is controlling the first switch element of said first cell, fourth and fifth switch elements for connecting said corresponding power supply voltage line and the ground voltage supply line of the circuit to said first and second bias lines, and a control circuit for controlling switch between said fourth and fifth switch elements and said second and third switch elements,
- wherein a plurality of said first, second, and third cells are provided in accordance with the size of said internal circuit so as to surround said internal circuit and so that the corresponding power supply lines are connected to each other.
3 more elements
Dependencies are inferred from the claim text.