Cobalt disilicide structure

A structure having a substrate, wherein the substrate includes:

• an insulated-gate field effect transistor (FET), wherein the FET includes a source, a drain, and a gate;
• a first layer of cobalt disilicide on the source, said first layer having substantially no cobalt monosilicide, and said first layer having essentially no stringer of an oxide of titanium thereon;
• a second layer of cobalt disilicide on the drain, said second layer having substantially no cobalt monosilicide, and said second layer having essentially no stringer of an oxide of titanium thereon;
• and
• a third layer of cobalt disilicide on the gate, said third layer having substantially no cobalt monosilicide, and said third layer having essentially no stringer of an oxide of titanium thereon, wherein the first layer of cobalt disilicide, the second layer of cobalt disilicide, and the third layer of cobalt disilicide are each in contact with a reagent comprising water, ammonium hydroxide, and hydrogen peroxide.